| PART |
Description |
Maker |
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
Power MOSFET(Vdss=50V)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| PJA138K |
50V N-Channel Enhancement Mode MOSFET
|
Pan Jit International
|
| BSS84N3 |
50V P-CHANNEL Enhancement Mode MOSFET
|
Cystech Electonics Corp.
|
| BSS138C3 |
50V N-CHANNEL Enhancement Mode MOSFET
|
Cystech Electonics Corp.
|
| TSM2N7002ECX TSM2N7002E TSM2N7002ECU |
50V N-Channel Enhancement Mode MOSFET
|
TSC[Taiwan Semiconductor Company, Ltd]
|
| SMS840 |
0.13A , 50V , RDS(ON) 10 P-Channel Enhancement MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| BSS138 |
50V N-Channel Enhancement Mode MOSFET - ESD Protected
|
Pan Jit International Inc.
|
| FDD24AN06LA011 FDD24AN06L-F085 |
N-Channel Logic Level PowerTrench? MOSFET 60V, 36A, 24mΩ
|
Fairchild Semiconductor
|
| STP36NE06 |
N-CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET
|
ST Microelectronics
|
| STP36NF03L |
N-CHANNEL 30V 0.015 OHM -36A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
